Answers are grounded in this paper and cite their sources.
Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50∕Ru∕Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10∕IrMn interface. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 109% at room temperature and 317% at 4.2K. A high tunneling spin polarization of 0.88 at 4.2K was estimated for epitaxial CCFA films with the B2 structure.
No takes yet. Share an insight, caveat, or question.
Marukame et al. (2007) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: