Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures

A phenomenological model of switching traps in irradiated metal-oxide-semiconductor (MOS) structures is presented. After electron capture, the E'/sub /spl gamma// center is supposed to be transformed into a new defect that is responsible for switching behavior. This new defect is assumed to have two energy levels (acceptor- and donor-like) and could easily communicate with substrate free carriers. The energy level position of the E'/sub /spl gamma// center, latent build-up of interface traps and negative oxide-trapped charge are also discussed.