Field dependence of two large hole capture cross sections in thermal oxide on silicon

The oxide field dependence of the hole capture cross sections of two oxide hole traps is reported. The capture cross section varies with the average oxide field as E−nox with n≂0.6 for the 10−13 cm2 hole trap and n≂0.4 for the 10−14 cm2 hole trap. The observed field dependences can be explained by the potential lowering of a highly localized neutral potential, V(r)=A/rm, with m=4 for the 10−13 cm2 hole trap and m=6.5 for the 10−14 cm2 hole trap.