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High-power InGaAs-GaAs distributed feedback lasers with nonabsorbing mirrors have been fabricated. These devices exhibit over 215 mW of single frequency CW optical power at a bias current of 300 mA and an operating temperature of 25°C. Low threshold currents of 15 mA and high slope efficiencies of 0.9 W/A near threshold are also obtained.
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Lammert et al. (1998) studied this question.
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