A silicon n+–p–π–p+ reach-through avalanche photodiode is described, where the p region has a high-low-high doping profile formed by a combination of ion implantation and epitaxy. Effective noise factors as low as 0.008–0.014 have been realised reproducibly for operation in the near-infrared. The influence of the primary photocurrent in the determination of the excess noise is discussed.
No takes yet. Share an insight, caveat, or question.
Goedbloed et al. (1978) studied this question.