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April 8, 1991Applied Physics Letters

Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes

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JRJ. J. L. RascolKMK. P. MartinTyndall CentreRCR. E. CarnahanGeorgia Institute of Technology

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Rascol et al. (1991) studied this question.

synapsesocial.com/papers/6a9451ca175d68f85fc578f6https://doi.org/10.1063/1.105203
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