Hot-electron transistors fabricated using a 600-Å InGaAs base and a 500-Å InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ-L scattering.
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Chen et al. (1987) studied this question.
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