We present x-ray photoelectron spectroscopy data that show that the chemisorbed oxygen previously observed to be on the surface of thin AlOₓ layers formed by room temperature thermal oxidation is bound by oxygen vacancies in the oxide. Increasing the electric field across the oxide, either by overcoating with a metallic electrode, or by electron bombardment, drives this surface chemisorbed oxygen into the vacancy sites. Due to the low bonding energies of these oxygen sites, subsequent oxygen exposures draw these O^- ions back to the surface, reforming chemisorbed O₂^-. Al∕AlOₓ∕Al tunnel junctions incorporating electron-bombarded AlOₓ barriers show a significant reduction in the low-frequency junction resistance noise level at 4.20.3em0exK.
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Tan et al. (2005) studied this question.
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