Time-resolved local voltage profiling in semi-insulating GaAs by electro-optics shows spontaneous current oscillations being caused both by contact domains and propagating domains in the bulk. In particular, we prove that the critical electric fields in the bulk are much higher than the average field inferred from geometry and exceed the threshold field for the Gunn effect. The dynamics of domain propagation are governed by the interaction between two different oscillatory systems, namely the contact region and bulk GaAs.
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Willing et al. (1994) studied this question.
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