Invasive growth of Co on (2×22)R45° reconstructed O∕Cu(001)

Submonolayer growth of Co on the reconstructed Cu(001)(2×22)R45°–O surface has been investigated by scanning tunneling microscopy. Cu atoms are displaced from the Cu(001)(2×22)R45°–O structure by incoming Co atoms and subsequently aggregate into elongated islands. The deposited Co atoms are randomly distributed in the oxygen adsorbed surface as individual atoms and clusters at low coverages [⩽0.4 monolayers (ML)]. For larger coverages (⩾0.5 ML), compact fcc Co patches are formed. The adsorbed oxygen acts as a surfactant. Interfacial intermixing is reduced when Co is deposited on the Cu(001)(2×22)R45°–O surface.