Sb-introduced effects of the cover layer on topological properties were investigated by atomic force microscopy for InAs quantum dots on GaAs using molecular beam epitaxy. Size enlargement for an Sb-introduced GaInAs cover layer was found. Elongation of the photoluminescence peak wavelength with a narrow linewidth was confirmed as a result of the increase of the dot height with less size fluctuation.
No takes yet. Share an insight, caveat, or question.
Matsuura et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: