III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

Quantum cascade (QC) detectors in the GaN/AlxGa1−xN material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al0.5Ga0.5N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 108 Jones at the background limited infrared performance temperature around 140 K.