We discuss the optical properties of single InGaN QDs grown by MOVPE. The samples were structured into mesas by focused‐ion‐beam etching and investigated by micro‐photoluminescence measurements. The QDs are characterized by a high temperature stability of their emission up to 150 K and strong localization of the carriers within the quantum dots, indicated by the observation of antibinding biexcitonic complexes. The influences of piezoelectric fields and spectral diffusion effects were investigated. Furthermore, the polarization of individual QD emission lines was analyzed giving an insight into their geometrical shape. The quantum dots were used for the realization of quantum dot stacks. The photoluminescence of these samples can be traced up to room temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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