InGaN nanodot arrays with improved optical properties, attributed to the strong localization of photogenerated carriers in the size-homogeneous nanodots, grown by nanoscale selective area epitaxy (NSAE) on electron-beam lithographically patterned templates are presented. The figure shows an array of 60 nm diameter cone-shaped InGaN nanodots with 200 nm spacing, and a single nanodot (inset).
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Chen et al. (2007) studied this question.
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