Reduction of leakage current in InGaN-based LEDs with V-pit embedded structures

We investigated the effects of V-pit structures embedded in the active region of n-GaN on the leakage current and the emission efficiency in InGaN/GaN light-emitting diodes (LEDs). Size-controlled V-pits were used for dislocation filtering. The V-shaped pit size was controlled by manipulating the growth temperature and pressure. The highest reverse voltage value was achieved with 150- nm-sized V-pit-embedded LEDs, which could be attributed to effective blocking of the threading dislocations that were acting as a leakage current source.