Combined inter- and intra-band spectroscopy studies are presented on structurally well-characterized InAs/GaAs(001) self-assembled quantum dots grown via conventional continuous deposition and the innovative punctuated island growth approach. Temperature and power dependent photoluminescence (PL) and PL Excitation (PLE) on these remarkably uniform quantum dot based samples (with typical PL linewidth ≈25 meV), reveal details of size-dependent electronic structure. These studies are complemented with systematic near- and middle-infrared photocurrent spectroscopy for inter-band through electron intra-band transitions as a function of temperature and applied electric field.
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Mukhametzhanov et al. (2001) studied this question.
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