Optical characterization of InxGa1—xN layers was done by photoluminescence, cathodoluminescence and optical absorption measurements. PL emissions less than 1.9 eV were observed from InxGa1—xN films with x > 0.53 that showed no phase separation. A bowing parameter of 2.3 eV was obtained from the relationship between PL emission energy and alloy composition. Absorption edge dependence on In composition was similar to the luminescence peak dependence on In composition. These optical properties indicate that the bandgap energy of InN is below 1.0 eV.
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Hori et al. (2002) studied this question.
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