A benzene thermal conversion route has been successfully developed to prepare nanocrystalline indium nitride at 180-200 degrees C by choosing NaNH(2) and In(2)S(3) as novel nitrogen and indium sources. This route has been also extended to the synthesis of other group III nitrides. The product InN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and infrared spectroscopy (IR). The optical properties of nanocrystalline InN were also recorded by means of UV-vis absorption spectroscopy and photoluminescence (PL) spectroscopy, indicating that the as-prepared sample was within the quantum confinement regime. Finally, the formation mechanism was also investigated.
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Xiao et al. (2002) studied this question.
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