Green electroluminescent (Ga, In, Al)N LEDs grownon Si (111)

The authors report on GaInN/GaN green electroluminescent diodes (λ = 508 nm) grown on Si (111) substrate. The I-V characteristics of this LED at room temperature are contrasted with a similar diode grown on sapphire. The turn-on voltage is 6.8 V and the operating voltage is 10.7 V at 20 mA. The large density of dislocations present in these heteroepitaxial nitrides on Si materials manifests itself through high reverse currents and low shunt resistances.