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July 1, 2000Japanese Journal of Applied Physics

Effect of Boron on Solid Phase Epitaxy of Ge on Si(111) Surface

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Authors

TYTomonori YamamotoNagahama Institute of Bio-Science and TechnologyMIMakoto IkedaOsaka Metropolitan UniversityKEK Ezoe

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Cite This Study

Yamamoto et al. (2000) studied this question.

synapsesocial.com/papers/6a945ea64efb9d310ac7ce98https://doi.org/10.1143/jjap.39.4545
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping1989 · 207 citations
  2. 24-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface1996 · 8 citations
  3. 3Surfactant-mediated growth of Ge on Si(111)1994 · 73 citations
  4. 4Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGex Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy1998 · 19 citations