The electric field distribution in the super-junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burnout (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super-junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.
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Huang et al. (2000) studied this question.
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