Total dose radiation hard 0.35 /spl mu/m SOI CMOS technology

This paper presents the total dose radiation performance of 0.35 /spl mu/m SOI CMOS devices fabricated in a radiation hard full dose SIMOX technology. The radiation performance is characterized by transistor threshold voltage shifts, transistor array leakage currents, and 256 K SRAM standby currents as a function of total dose up to 10 Mrad(SiO/sub 2/). The worst case threshold voltage shifts of front channels are less than 60 mV for PMOS transistors at 1 Mrad(SiO/sub 2/) and less than 10 mV for NMOS transistors. No significant radiation induced leakage currents are observed in small transistor arrays to 10 Mrad(SiO/sub 2/). Standby currents of 256 K SRAMs are less than the 1.5 mA specification over the total dose range of 1 Mrad(SiO/sub 2/). The results suggest high density SRAMs and ASIC fabricated in this technology will perform well in harsh radiation environment.