A charge pumping method for rapid determination of interface-trap parameters in metal-oxide-semiconductor devices

We present a new implementation of charge pumping for rapid characterization of interface-trap parameters, especially geometric mean of electron and hole capture cross sections, in metal-oxide-semiconductor field-effect transistors (MOSFETs). With the help of an HP8116A (or equivalent) function generator operated in the voltage-controlled-oscillator mode, this method enables measurement of the charge pumping current as a function of frequency with one continuous sweep of the frequency. Data analysis can be performed on an HP4145B (or equivalent) parameter analyzer by defining user functions. The measurement setup can be readily assembled with standard instruments without the need of a computer. It allows fast measurements without compromising the accuracy. The improved measurement speed has led to new observations revealing the rapid change of the capture cross sections of the interface traps shortly after Fowler–Nordheim hot-carrier injection.