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July 1, 1990Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Step structure and interface morphology: Arsenic on vicinal silicon surfaces

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TOT. R. OhnoColorado School of MinesEWEllen D. WilliamsIS Instruments (United Kingdom)

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Ohno et al. (1990) studied this question.

synapsesocial.com/papers/6a9463fa13c4da2a4264caa6https://doi.org/10.1116/1.584981
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