The composition distribution of Ge(Si)/Si (001) islands grown at 700 °C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron microscope. Island shapes are investigated using cross-section transmission electron microscopy. Results show nonuniformity of the composition distribution in the islands, which affects the evolution of the aspect ratios of height-to-base diameter of dislocated islands.
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Liao et al. (2000) studied this question.
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