Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates

ZnSe/ZnS quantum wires and quantum dots were grown on unpatterned substrates by molecular beam epitaxy. Several substrate orientations were compared. These structures exhibited a strong luminescence. A linear crystallographic dependence of the photoluminescence peak energy was observed when comparing structures grown in the same experimental conditions. All samples exhibited also strong zero-dimensional–one-dimensional confinement signatures. An empirical analysis is provided illuminating the issue involved by the redshift.