In order to elucidate the cause of step bunching formed on vicinal GaAs(001) annealed in AsH3/H2 ambient, we investigated the surface of vicinal GaAs(001) annealed in H2, AsH3/N2, AsH3/H2, and N2 by scanning tunneling microscope. Since step bunches always formed on surfaces annealed with hydrogen but not on surfaces annealed in ambients without hydrogen, we conclude that hydrogen is crucial in the formation of step bunching.
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Hata et al. (2000) studied this question.
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