We consider the spin-polarizing properties of a ferromagnetic resonant interband tunneling diode based on the type-II InAs/(AlSb)/GaMnSb/(AlSb)/InAs heterostructure system. The current–voltage characteristics are simulated using the effective bond-orbital method, in conjunction with self-consistent treatments of both the electrostatic potential and the magnetic exchange interaction. We find that the device can be employed as either a source of spin-polarized electrons, whose polarity varies with applied bias, or as a spin valve. For example, the polarization of electrons tunneling to the collector from an unpolarized emitter can exceed 75% in either direction.
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Vurgaftman et al. (2003) studied this question.
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