A determination of interface state energy during the capture of electrons and holes using DLTS

A quasi-equilibrium or a steady-state method using a transient capacitance technique for determining the interface energy is presented. During the carrier capture, a quasi-equilibrium or a steady state is established by adjusting the capture pulse voltage and the gate pulse bias. The quasi-Fermi level during capture intersects the interface state level which dominates the emission following the removal of the capture pulse. The interface state densities for samples fabricated in and orientations were given as examples. Capture cross section was also obtained using a similar procedure.