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We have used high-frequency and quasi-static capacitance-voltage measurements to study the properties of interface states generated upon vacuum-ultraviolet irradiation under positive gate bias followed by neutralization of the holes trapped in the oxide. The data indicate the exclusive generation of fast donor-type states that anneal at room temperature. We propose that these states explain the turn-around effect and annealing of positive charge.
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Druijf et al. (1994) studied this question.
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