This paper presents a survey of the recent developments of piezoresistive sensors. First, the physical concepts which are essential for the understanding of these devices are recalled, and the characteristics and limitations (particularly temperature limitations) of semiconductor strain gauges are discussed. A further section is devoted to strain-gauge pressure transducers (the most important application of strain gauges), and, finally, possible future developments are outlined.
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Taroni et al. (1970) studied this question.
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