Carbon‐free lanthanum oxide is deposited by liquid injection MOCVD over a wide temperature range (300–600 °C) in the presence of oxygen using a new volatile lanthanum alkoxide precursor [La(mmp)3]. SEM of a typical lanthanum oxide film deposited at 450°C from a [La(mmp)3]/tetraglyme mixture in toluene reveals a columnar growth structure with XRD reflection pattern and intensity approximately consistent with that of La2O3 powder. The paper suggests the suitability of this low temperature process for the deposition of high‐κ lanthanum oxide films as gate dielectric for Si‐based TFTs.
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Aspinall et al. (2004) studied this question.
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