Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl– ions

The photoelectrochemical behaviour of n-GaN in contact with 1 M H2SO4 and with acidic solutions containing Cl− ions was studied using rotating-ring-disk voltammetry, electrochemical impedance spectroscopy and etching experiments. It was found that n-GaN is stabilized against photoanodic decomposition in the presence of Cl− ions due to the competing oxidation of Cl− to Cl2. The competition kinetics were interpreted on the basis of a mechanism, in which intrinsic surface states take part in the photoanodic oxidation of Cl−. The participation of such intrinsic surface states may explain the discrepancies found in the literature concerning the photoelectrochemical behaviour of n-GaN.