Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2

We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with ferroelectric Hf0.5Zr0.5O2/SiO2 gate stacks by splitI–Vmeasurement. We find that the recombination of electrons and holes within the gate stacks induces the generation of traps and consequently results in the degradation of the endurance characteristics of the FeFET. Therefore, by floating the body terminal, we suppress the hole injection into the gate stacks and the recombination and improve the endurance characteristics.