Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide

Radiation-induced hole trapping in reoxidized nitrided silicon dioxide (RNO) was studied with electron spin resonance spectroscopy. It is demonstrated that the dominant hole trap in RNO is not the well known E′ center of conventional oxides. This finding confirms our earlier speculation, based on detrapping experiments, that the dominant hole trap in RNO is a species distinctly different from that in conventional oxide.