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A scanned-laser microscope has been developed to generate photoluminescence maps, or images, of semiconductor samples. This instrument is shown to be extremely useful for evaluating semiconductor wafers, especially those intended for light-emitting diodes. The design and construction of this new microscope are discussed, and performance tests of a prototype are presented. The photoluminescence microscope achieves a spatial resolution near 10(-3) cm with a spectral definition of 100 A and examines an area 0.6 cm on a side in a few seconds. Examples of the application of the photoluminescence microscope to testing of GaAsP wafers are presented and compared with the results of other kinds of tests to determine the suitability of these wafers for light-emitting diodes.
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Black et al. (1972) studied this question.
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