(InAs)1(GaAs)1 Layered Crystal Grown on (100)InP by MOCVD

The crystal growth process is investigated for a (InAs)1(GaAs)1 layered crystal (LC) grown on (100) oriented InP by metallorganic chemical vapor deposition (MOCVD). It is shown that substrate misorientation strongly affects the layered crystal properties. Macroscopic growth steps are observed when these LCs are grown on (100) vicinal oriented InP substrates (α=2^°). Furthermore, the superlattice orientation is in the (100) direction and does not reflect the original substrate surface. The results indicate that preferential layer nucleation of InAs/GaAs takes place along (100) singular surfaces.