Temperature dependence of electron mobility in (InAs)3(GaAs)1 superlattices

(InAs)3(GaAs)1 superlattices have been obtained successfully by the beam separation method of molecular beam epitaxy. The superlattice structure has been confirmed by lattice images and satellite spots of transmission electron microscopy. The electron mobilities of the superlattices are higher than those of InxGa1−xAs alloys at high temperature. The electron mobility of superlattices with the carrier density of 3.3×1017 cm−3 is 6000 cm2/V s at 400 K, which is about 20% higher than that of InxGa1−xAs ternary alloys with higher In mole fraction (x=0.9).