Sb 2 Se 3 /VO 2 heterojunction is successfully fabricated on a sapphire substrate using pulsed laser deposition (PLD) and magnetron sputtering. The device shows prominent self‐powered broadband photoresponse with ultrafast response speed at both rise and decay processes. The highest responsivity of the device is acquired under 520 nm wavelength light incidence. The optimized responsivity reaches 0.244 A W –1 and the response times are 200 and 360 µs at rise and decay, respectively. Sb 2 Se 3 /VO 2 heterojunction is promising for self‐powered broadband photodetectors.
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Xin et al. (2021) studied this question.