A tunneling spectroscopy technique to measure the energy level of an electronic state in a completely nonconducting surface is demonstrated. Spectroscopy is performed by electrostatic force detection of single-electron tunneling between a scanning probe and the state as a function of an applied voltage. An electronic state near the surface of a SiO2 film is found 5.5±0.2eV below the conduction band edge. A random telegraph signal, caused by sporadic back-and-forth single-electron tunneling, is observed as the probe Fermi level passes through the state energy.
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Bussmann et al. (2006) studied this question.
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