A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET

We fabricated and characterized a new spin-functional metal–oxide–semiconductor field-effect transistor (MOSFET) referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductance controlled by the magnetization configurations of the MTJ at room temperature. This is the first observation of spin-transistor operations for spin-functional MOSFETs.