Answers are grounded in this paper and cite their sources.
We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3 mm between two Au/Ge/Ni electrodes, triggered by 800 nm Ti–sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si 3 N 4 layer and bare GaAs dipole antenna. Both the current in the antenna and the radiation amplitude present as linear to the exciting power when the applied voltage is fixed. The Si 3 N 4 insulated GaAs dipole antenna can hold higher biased voltage than a normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than that of a normal GaAs dipole antenna.
No takes yet. Share an insight, caveat, or question.
Xu Jing-Zhou (2004) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: