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The field amplitude and frequency dependent complex ac susceptibility χ( H m , f ) of three Y–Ba–Cu–O disks made by a top-seeded melt growth technique has been measured at 77 K with the ac field applied along the c -axis of the samples (parallel to their thickness). A procedure based on the Bean model has been developed to calculate the critical-current density J c near the surface of the sample from the measured χ( H m ) for the case where the maximum imaginary component χ '' is not reached.
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Chen et al. (2008) studied this question.
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