The interaction of 4H– and 6H–SiC (0001)Si surfaces with atomic hydrogen produced by a remote rf plasma source is investigated. The impact of the low temperature (200 °C) and high temperature (750 °C) interaction on chemical and morphological surface modifications is addressed with in situ real time monitoring using spectroscopic ellipsometry. It is found that the interaction of SiC surfaces with atomic hydrogen at 200 °C is suitable for producing clean, atomically ordered, smooth and terraced surfaces with a stoichiometry associated with a 3x3R30° reconstruction, ideal for GaN heteroepitaxy.
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Losurdo et al. (2004) studied this question.
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