Large-area vertical-geometry Pt/(010) β-Ga2O3 Schottky barrier diodes and their temperature-dependent electrical properties

Herein, vertical-geometry Pt/(010) β-Ga 2 O 3 Schottky barrier diodes (SBDs) with various large areas (2.25 × 10 −2 , 4 × 10 −2 to 6.25 × 10 −2 cm 2 ) were fabricated on (010) orientation β-Ga 2 O 3 substrates. The electrical properties of different area diodes and the uniformity of diodes with the same area were analyzed. The rectifying ratio of all diodes was determined to be larger than 10 8 at the bias of ±2 V. The current-voltage ( I–V ) characteristics of SBD with an area of 2.25 × 10 −2 cm 2 were investigated in detail from 300 to 450 K. The parameters of the diodes show a strong dependence on temperature, including ideality factor ( n ), on-resistance ( R on ), turn-on voltage ( V on ), and the Schottky barrier ( Φ b ). The results indicate that a dominant inhomogeneous Schottky barrier exists at the Pt/β-Ga 2 O 3 interface. Such large-area devices exhibit that the value of n is close to 1 and the value of Φ b was 1.09 eV at zero bias. In addition, the V on remains low and the stability remains good even after the tests at 450 K. These results indicate that we have successfully fabricated large-area SBDs with excellent performances. This work may contribute to further understanding of the performance of β-Ga 2 O 3 diodes in large areas and harsh environments.