Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

In this study, the effect of using high-electron-mobility channel materials, such as GaAs, InAs, and InGaAs, on drive current in n-channel metal-oxide-semiconductor (nMOS) and p-channel metal-oxide-semiconductor devices is studied. Relative to silicon, these materials have lower electron effective mass, which leads to lower inversion capacitance (Cinv) due to their lower density of states. Despite their lower Cinv, high-electron mobility channel materials are shown to be promising alternatives to silicon in delivering higher drive current in nMOS devices.