A deep level capacitance transient analysis of n-In0.53Ga0.47As and n-In0.52Al0.48 As epitaxial layers grown by molecular-beam epitaxy is reported. The In0.53Ga0.47As layers exhibited very low deep level concentrations. The principle deep level was an electron trap located near mid gap at a concentration of 1.5×1013 cm−3. The In0.52Al0.48As layers showed high concentrations of deep electron traps. The observed capacitance transients in In0.52Al0.48As samples exhibited nonexponential behavior caused by the similarities in time constants of different deep levels. By using an analysis of stored capacitance transients based on fitting to multiple exponentials, the activation energies and concentrations of six electron traps have been identified. The activation energies of the two traps with highest concentrations are 0.58 and 0.61 eV.
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Whitney et al. (1987) studied this question.