Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction

Ge is a promising candidate for replacing Si for future complementary metal–oxide–semiconductors (CMOSs) because of its high mobility. However, the intrinsic GeO2/Ge instability is a major obstacle to achieving a good interface. The reaction at the GeO2/Ge interface and the kinetic effects initiated by the interfacial reaction are systematically studied in this paper. The interfacial reaction is regarded as a redox reaction mediated by the oxygen vacancy (Vo). Owing to the incorporation of Vo into GeO2, several kinetic effects are brought about. In this paper, we discuss these Vo-induced kinetic effects such as GeO desorption, GeO2 crystallization with an α-quartz-like phase, and local void formation on GeO2. A unified model is proposed by taking Vo generation at the GeO2/Ge interface into consideration.