Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply

Epitaxial 3C-SiC film has been grown on thin silicon-on-insulator (SOI) substrate by chemical vapor deposition (CVD) using an alternating supply of SiH2Cl2 and C2H2. The SiC surface deposited on SOI substrate is almost flat with few hillocks, and the full-width at half maximum (FWHM) of the X-ray diffraction (XRD) peak of the SiC(111) was 0.2°. Use of a thin SOI substrate is found to be essential to suppress the growth of voids that appear at the SiC/Si interface.