I–U characteristics of semi-insulating GaAs samples with different Cr-doping are investigated up to field strengths of about 103 V/m. At field strengths above 2 × 104 V/m a saturation of the current or a range with negative differential resistivity (NDR) connected with current fluctuations occurs. Short samples show low-frequency current oscillations. This non-linear I–U behaviour is explained by a decrease of the carrier concentration due to field enhanced carrier capture into deep trap levels. A direct correlation between the strength of the NDR behaviour and the concentration of the main electron trap EL2 is found.
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Kühnel et al. (1987) studied this question.
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